 | | | |
| PartNumber | RF4E0808N | RF4E080BN | RF4E080BN TB |
| Description | |||
| Manufacturer | - | ROHM Semiconductor | - |
| Product Category | - | Transistors - FETs, MOSFETs - Single | - |
| Series | - | RF4E080BN | - |
| Packaging | - | Reel | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | DFN2020-8 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 2 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 7 ns | - |
| Rise Time | - | 10 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Rds On Drain Source Resistance | - | 17.6 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 33 ns | - |
| Typical Turn On Delay Time | - | 8 ns | - |
| Qg Gate Charge | - | 14.5 nC | - |
| Forward Transconductance Min | - | 5 S | - |