RGCL80T

RGCL80TS60DGC11 vs RGCL80TK60GC11 vs RGCL80TK60DGC11

 
PartNumberRGCL80TS60DGC11RGCL80TK60GC11RGCL80TK60DGC11
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT APIGBT Transistors IGBT HIGH VOLT AND CURRENT APIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM SemiconductorROHM SemiconductorROHM Semiconductor
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247-3TO-3PFMTO-3PFM
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V600 V
Collector Emitter Saturation Voltage1.4 V1.4 V1.4 V
Maximum Gate Emitter Voltage30 V30 V30 V
Continuous Collector Current at 25 C65 A35 A35 A
Pd Power Dissipation148 W57 W57 W
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
PackagingBulkTubeTube
BrandROHM SemiconductorROHM SemiconductorROHM Semiconductor
Gate Emitter Leakage Current200 nA200 nA200 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity303030
SubcategoryIGBTsIGBTsIGBTs
Part # AliasesRGCL80TS60DRGCL80TK60RGCL80TK60D
制造商 型号 描述 RFQ
RGCL80TS60GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL80TS60DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL80TK60GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL80TK60DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL80TK60 全新原装
RGCL80TK60D 全新原装
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