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| PartNumber | RK7002BMT116 | RK7002BMHZGT116 | RK7002BT116 |
| Description | MOSFET 2.5V Drive Nch MOSFET | MOSFET Nch 60V Vds 0.25A 3Rds(on) SOT-23 | MOSFET N-CH 60V 0.25A SOT-23 |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 250 mA | 250 mA | - |
| Rds On Drain Source Resistance | 2.4 Ohms | 1.7 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 350 mW | 350 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Series | RK7002BM | - | RK7002B |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Forward Transconductance Min | 250 ms | - | - |
| Fall Time | 28 ns | 28 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | 18 ns | - |
| Typical Turn On Delay Time | 3.5 ns | 3.5 ns | - |
| Part # Aliases | RK7002BM | RK7002BMHZG | - |
| Unit Weight | 0.000282 oz | - | 0.050717 oz |
| Qualification | - | AEC-Q101 | - |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SST3 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 200mW |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 15pF @ 25V |
| FET Feature | - | - | Logic Level Gate, 2.5V Drive |
| Current Continuous Drain Id 25°C | - | - | 250mA (Ta) |
| Rds On Max Id Vgs | - | - | 2.4 Ohm @ 250mA, 10V |
| Vgs th Max Id | - | - | 2.3V @ 1mA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 200 mW |
| Id Continuous Drain Current | - | - | 250 mA |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 3 Ohms |
| Forward Transconductance Min | - | - | 0.25 S |
