 | |  | |
| PartNumber | RM2N650IP | RM2N650LD-T | RM2N650LD |
| Description | MOSFET TO-251 MOSFET | MOSFET D-PAK MOSFET | |
| Manufacturer | Rectron | Rectron | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-251-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 2 A | 2 A | - |
| Rds On Drain Source Resistance | 2.5 Ohms | 2.5 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 10 nC | 10 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 23 W | 23 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Rectron | Rectron | - |
| Forward Transconductance Min | 2 S | 2 S | - |
| Fall Time | 11 ns | 11 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns | 3 ns | - |
| Factory Pack Quantity | 800 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 65 ns | 65 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Rectron |
RM2N650IP | MOSFET TO-251 MOSFET | |
| RM2N650LD-T | MOSFET D-PAK MOSFET | ||
| RM2N650LD | 全新原装 |