 | | | |
| PartNumber | RM6N800IP | RM6N800T2 | RM6N800HD-T |
| Description | MOSFET TO-251 MOSFET | MOSFET TO-220 MOSFET | MOSFET D2-PAK MOSFET |
| Manufacturer | Rectron | Rectron | Rectron |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-251-3 | TO-220-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
| Id Continuous Drain Current | 6 A | 6 A | 6 A |
| Rds On Drain Source Resistance | 900 mOhms | 900 mOhms | 900 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 24 nC | 22.8 nC | 22.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 98 W | 98 W | 98 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Rectron | Rectron | Rectron |
| Forward Transconductance Min | 6 S | 6 S | 6 S |
| Fall Time | 6 ns | 6 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 5 ns | 5 ns |
| Factory Pack Quantity | 800 | 1000 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 53 ns | 53 ns | 53 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Rectron |
RM6N800IP | MOSFET TO-251 MOSFET | |
| RM6N800TI | MOSFET TO-220F MOSFET | ||
| RM6N800T2 | MOSFET TO-220 MOSFET | ||
| RM6N800HD-T | MOSFET D2-PAK MOSFET | ||
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