 |  | |
| PartNumber | RN1102MFV,L3F | RN1102MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms |
| Manufacturer | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Transistor Polarity | NPN | NPN |
| Typical Input Resistor | 10 kOhms | 10 kOhms |
| Typical Resistor Ratio | 1 | 1 |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-723 | - |
| DC Collector/Base Gain hfe Min | 30 | 50 |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V |
| Continuous Collector Current | 100 mA | 100 mA |
| Pd Power Dissipation | 150 mW | 150 mW |
| Series | RN1102 | RN1102 |
| Packaging | Reel | Reel |
| Emitter Base Voltage VEBO | 10 V | - |
| Brand | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 8000 |
| Subcategory | Transistors | Transistors |
| Configuration | - | Single |
| Peak DC Collector Current | - | 100 mA |
| Maximum Operating Temperature | - | + 150 C |
| DC Current Gain hFE Max | - | 50 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
RN1102MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | |
| RN1102MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms | ||
| RN1102MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto | ||
| RN1102MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms | ||
| RN1102MFVL3FCT-ND | 全新原装 | ||
| RN1102MFVL3FDKR-ND | 全新原装 | ||
| RN1102MFVL3FTR-ND | 全新原装 | ||
| RN1102MFV,L3F(B | Pre-Biased BJT | ||
| RN1102MFVL3F | Bipolar Transistors - Pre-Biased TRANSISTOR PD=150MW F=1MHZ | ||
| RN1102MFV TPL3 | 全新原装 | ||
| RN1102MFV(TL3 | 全新原装 | ||
| RN1102MFV | 全新原装 |