RN1501(T

RN1501(TE85L,F) vs RN1501(TE85L vs RN1501(TE85L)

 
PartNumberRN1501(TE85L,F)RN1501(TE85LRN1501(TE85L)
DescriptionBipolar Transistors - Pre-Biased Gen Trans NPN x 2 SMV, 50V, 100A
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSMV-5--
DC Collector/Base Gain hfe Min30--
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesRN1501--
PackagingReelDigi-ReelR Alternate Packaging-
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO10 V--
Operating Temperature Range- 55 C to + 150 C--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Package Case-SC-74A, SOT-753-
Mounting Type-Surface Mount-
Supplier Device Package-SMV-
Power Max-300mW-
Transistor Type-2 NPN - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-4.7k-
Resistor Emitter Base R2 Ohms-4.7k-
DC Current Gain hFE Min Ic Vce-30 @ 10mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 250μA, 5mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-250MHz-
制造商 型号 描述 RFQ
Toshiba
Toshiba
RN1501(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 SMV, 50V, 100A
RN1501(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 SMV, 50V, 100A
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RN1501(TE85L 全新原装
RN1501(TE85L) 全新原装
RN1501(TE85LF) 全新原装
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