RN1909F

RN1909FE(TE85L,F) vs RN1909FE vs RN1909FE(TE85LF)CT-ND

 
PartNumberRN1909FE(TE85L,F)RN1909FERN1909FE(TE85LF)CT-ND
DescriptionBipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio2.14--
Mounting StyleSMD/SMT--
Package / CaseES-6--
DC Collector/Base Gain hfe Min70--
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation100 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReelDigi-ReelR Alternate Packaging-
Emitter Base Voltage VEBO15 V--
BrandToshiba--
Channel ModeEnhancement--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Series---
Package Case-SOT-563, SOT-666-
Mounting Type-Surface Mount-
Supplier Device Package-ES6-
Power Max-100mW-
Transistor Type-2 NPN - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-47k-
Resistor Emitter Base R2 Ohms-22k-
DC Current Gain hFE Min Ic Vce-70 @ 10mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 250μA, 5mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-250MHz-
制造商 型号 描述 RFQ
Toshiba
Toshiba
RN1909FE(TE85L,F) Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz
RN1909FE 全新原装
RN1909FE(TE85LF)CT-ND 全新原装
RN1909FE(TE85LF)DKR-ND 全新原装
RN1909FE(TE85LF)TR-ND 全新原装
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