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| PartNumber | RN1909FE(TE85L,F) | RN1909FE | RN1909FE(TE85LF)CT-ND |
| Description | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz | ||
| Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 47 kOhms | - | - |
| Typical Resistor Ratio | 2.14 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ES-6 | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Maximum Operating Frequency | 250 MHz | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Emitter Base Voltage VEBO | 15 V | - | - |
| Brand | Toshiba | - | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Series | - | - | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | ES6 | - |
| Power Max | - | 100mW | - |
| Transistor Type | - | 2 NPN - Pre-Biased (Dual) | - |
| Current Collector Ic Max | - | 100mA | - |
| Voltage Collector Emitter Breakdown Max | - | 50V | - |
| Resistor Base R1 Ohms | - | 47k | - |
| Resistor Emitter Base R2 Ohms | - | 22k | - |
| DC Current Gain hFE Min Ic Vce | - | 70 @ 10mA, 5V | - |
| Vce Saturation Max Ib Ic | - | 300mV @ 250μA, 5mA | - |
| Current Collector Cutoff Max | - | 100nA (ICBO) | - |
| Frequency Transition | - | 250MHz | - |