 | | | |
| PartNumber | RN2110MFV(TPL3) | RN2110MFV | RN2110MFV(TL3SONY) |
| Description | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transisto | |
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | N | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | PNP | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-723 | - | - |
| DC Collector/Base Gain hfe Min | 400 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN2110 | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 120 | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
RN2110MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | |
| RN2110MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms | ||
| RN2110MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms | ||
| RN2110MFVL3F-ND | 全新原装 | ||
| RN2110MFV | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transisto | ||
| RN2110MFV(TL3SONY) | 全新原装 | ||
| RN2110MFV-TPL3 | 全新原装 |