RN4906F

RN4906FE(TE85L,F) vs RN4906FE,LF(CT vs RN4906FE

 
PartNumberRN4906FE(TE85L,F)RN4906FE,LF(CTRN4906FE
DescriptionBipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100ABipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
ManufacturerToshibaToshibaTOSHIBA
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased
RoHSYY-
ConfigurationDual--
Transistor PolarityNPN, PNPNPN, PNP-
Typical Input Resistor4.7 kOhms4.7 kOhms-
Typical Resistor Ratio0.10.1-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseES6-6SOT-563-
DC Collector/Base Gain hfe Min8080-
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current100 mA100 mA-
Peak DC Collector Current100 mA--
Pd Power Dissipation100 mW100 mW-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesRN4906RN4906-
PackagingReelReel-
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V5 V-
Operating Temperature Range- 55 C to + 150 C--
BrandToshibaToshiba-
Number of Channels2 Channel2 Channel-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity40004000-
SubcategoryTransistorsTransistors-
Unit Weight-0.000106 oz-
制造商 型号 描述 RFQ
Toshiba
Toshiba
RN4906FE(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A
RN4906FE,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN4906FE,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
RN4906FE(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A
RN4906FELF(CTCT-ND 全新原装
RN4906FELF(CTDKR-ND 全新原装
RN4906FELF(CTTR-ND 全新原装
RN4906FELF(CT Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/1MHZ
RN4906FE 全新原装
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