RN4990F

RN4990FE,LF(CT vs RN4990FE vs RN4990FELF(CT

 
PartNumberRN4990FE,LF(CTRN4990FERN4990FELF(CT
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in transistorBipolar Transistors - Pre-Biased ES6 PLN LF TRAN P=100MW /250M
ManufacturerToshibaTOSHIBA-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
Transistor PolarityNPN, PNP--
Typical Input Resistor4.7 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-563--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation100 mW--
SeriesRN4990--
PackagingReel--
Emitter Base Voltage VEBO5 V--
BrandToshiba--
Number of Channels2 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
制造商 型号 描述 RFQ
Toshiba
Toshiba
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