RS1E350

RS1E350BNTB vs RS1E350 vs RS1E350BN//////////////

 
PartNumberRS1E350BNTBRS1E350RS1E350BN//////////////
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSOP-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance1.2 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge185 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation35 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Fall Time105 ns--
Product TypeMOSFET--
Rise Time215 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time235 ns--
Typical Turn On Delay Time45 ns--
Part # AliasesRS1E350BN--
制造商 型号 描述 RFQ
RS1E350BNTB MOSFET 4.5V Drive Nch MOSFET
RS1E350GNTB MOSFET NCH 30V 80A POWER
RS1E350BNTB MOSFET N-CH 30V 35A 8HSOP
RS1E350 全新原装
RS1E350BN////////////// 全新原装
RS1E350BN 全新原装
RS1E350BNFU7TB 全新原装
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