 |  | | |
| PartNumber | SBC846BPDW1T1G | SBC846BPDW | SBC846BPDW1T1 |
| Description | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | - Bulk (Alt: SBC846BPDW1T1) | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | - | - |
| Transistor Polarity | NPN, PNP | NPN PNP | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 65 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 6 V, - 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.6 V | 0.6 V | - |
| Maximum DC Collector Current | 100 mA | 100 mA | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC846BPDW1 | BC846BPDW1 | - |
| DC Current Gain hFE Max | 475 at 2 mA, 5 V | 475 at 2 mA at 5 V | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V | - | - |
| Pd Power Dissipation | 380 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Package Case | - | 6-TSSOP, SC-88, SOT-363 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SC-88/SC70-6/SOT-363 | - |
| Power Max | - | 380mW | - |
| Transistor Type | - | NPN, PNP | - |
| Current Collector Ic Max | - | 100mA | - |
| Voltage Collector Emitter Breakdown Max | - | 65V | - |
| DC Current Gain hFE Min Ic Vce | - | 200 @ 2mA, 5V | - |
| Vce Saturation Max Ib Ic | - | 600mV @ 5mA, 100mA | - |
| Current Collector Cutoff Max | - | 15nA (ICBO) | - |
| Frequency Transition | - | 100MHz | - |
| Pd Power Dissipation | - | 380 mW | - |
| Collector Emitter Voltage VCEO Max | - | 65 V | - |
| Collector Base Voltage VCBO | - | 80 V | - |
| Emitter Base Voltage VEBO | - | 6 V - 5 V | - |
| DC Collector Base Gain hfe Min | - | 200 at 2 mA at 5 V | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| SBC846BPDW1T1G | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | ||
| SBC846BPDW1T2G | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | ||
| SBC846BPDW | 全新原装 | ||
| SBC846BPDW1T1 | - Bulk (Alt: SBC846BPDW1T1) | ||
| SBC846BPDWT1G | 全新原装 | ||
ON Semiconductor |
SBC846BPDW1T2G | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | |
| SBC846BPDW1T1G | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR |