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| PartNumber | SI1012X-T1-GE3 | SI1012X-T1-E3 | SI1012X-T1 |
| Description | MOSFET 20V 0.6A 175mW 700mohm @ 4.5V | MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3 |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-89-3 | SC-89-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Id Continuous Drain Current | 600 mA | - | - |
| Rds On Drain Source Resistance | 700 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 750 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 275 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 0.8 mm | 0.8 mm | - |
| Length | 1.6 mm | 1.6 mm | - |
| Series | SI1 | SI1 | - |
| Transistor Type | 1 N Channel | - | - |
| Width | 0.85 mm | 0.85 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 1 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Part # Aliases | SI1012X-GE3 | SI1012X-E3 | - |
| Unit Weight | 0.001058 oz | 0.001058 oz | - |