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| PartNumber | SI1905BDH-T1 | SI1905BDH-T1-GE3 | SI1905BDH-T1-E3 |
| Description | IGBT Transistors MOSFET 8.0V 0.63A 0.357W | ||
| Manufacturer | - | - | Vishay Siliconix |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Tape & Reel (TR) |
| Package Case | - | - | 6-TSSOP, SC-88, SOT-363 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SC-70-6 (SOT-363) |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 357mW |
| Drain to Source Voltage Vdss | - | - | 8V |
| Input Capacitance Ciss Vds | - | - | 62pF @ 4V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 630mA |
| Rds On Max Id Vgs | - | - | 542 mOhm @ 580mA, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 1.5nC @ 4.5V |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| SI1905BDH-T1 | 全新原装 | ||
| SI1905BDH-T1-GE3 | 全新原装 | ||
| SI1905BDH-TI-E3 | 全新原装 | ||
Vishay |
SI1905BDH-T1-E3 | IGBT Transistors MOSFET 8.0V 0.63A 0.357W |