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| PartNumber | SI1967DH-T1-GE3 | SI1967DH-T1-E3 |
| Description | MOSFET -20V Vds 8V Vgs SC70-6 | MOSFET -20V Vds 8V Vgs SC70-6 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1 mm | 1 mm |
| Length | 2.1 mm | 2.1 mm |
| Series | SI1 | SI1 |
| Width | 1.25 mm | 1.25 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI1903DL-T1-GE3 | SI1967DH-E3 |
| Unit Weight | 0.000265 oz | 0.000265 oz |
| Number of Channels | - | 2 Channel |
| Transistor Polarity | - | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V |
| Id Continuous Drain Current | - | 1.3 A |
| Rds On Drain Source Resistance | - | 490 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 400 mV |
| Vgs Gate Source Voltage | - | 8 V |
| Qg Gate Charge | - | 4 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 1.25 W |
| Configuration | - | Dual |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 2 P-Channel |
| Forward Transconductance Min | - | 2 S |
| Fall Time | - | 10 ns |
| Rise Time | - | 27 ns |
| Typical Turn Off Delay Time | - | 15 ns |
| Typical Turn On Delay Time | - | 12 ns |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1967DH-T1-GE3 | MOSFET -20V Vds 8V Vgs SC70-6 | |
| SI1967DH-T1-E3 | MOSFET -20V Vds 8V Vgs SC70-6 | ||
Vishay |
SI1967DH-T1-E3 | MOSFET 2P-CH 20V 1.3A SC70-6 | |
| SI1967DH-T1-GE3 | MOSFET 2P-CH 20V 1.3A SC70-6 | ||
| SI1967DH-T1-GE3-CUT TAPE | 全新原装 |