![]() | ![]() | ![]() | |
| PartNumber | SI2302CDS | SI2302CDS-1-GE3 | SI2302CDS-T1 |
| Description | |||
| Manufacturer | VISHAY | - | VISHAY |
| Product Category | FETs - Single | - | FETs - Single |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SI2302CDS-E3 |
| Unit Weight | - | - | 0.050717 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | SOT-23-3 (TO-236) |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 710mW |
| Transistor Type | - | - | 1 N-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 2.6A (Ta) |
| Rds On Max Id Vgs | - | - | 57 mOhm @ 3.6A, 4.5V |
| Vgs th Max Id | - | - | 850mV @ 250μA |
| Gate Charge Qg Vgs | - | - | 5.5nC @ 4.5V |
| Pd Power Dissipation | - | - | 710 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 7 ns |
| Rise Time | - | - | 7 ns |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 2.6 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 57 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 30 ns |
| Typical Turn On Delay Time | - | - | 8 ns |
| Channel Mode | - | - | Enhancement |