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| PartNumber | SI2319DDS-T1-GE3 | SI2319DS-T1-E3 | SI2319CDS-T1-GE3 |
| Description | MOSFET -40V Vds 20V Vgs SOT-23 | MOSFET 40V 3.0A 1.25W 82 mohms @ 10V | MOSFET -40V Vds 20V Vgs SOT-23 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 3.6 A | 3.0 A | 4.4 A |
| Rds On Drain Source Resistance | 75 mOhms | 82 mOhms | 77 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 12.5 nC | 17 nC | 21 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.7 W | 1.25 W | 2.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 10 S | 7 S | 10 S |
| Fall Time | 12 ns | 25 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 15 ns | 9 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 25 ns | 20 ns |
| Typical Turn On Delay Time | 10 ns | 7 ns | 8 ns |
| Tradename | - | TrenchFET | TrenchFET |
| Height | - | 1.45 mm | 1.45 mm |
| Length | - | 2.9 mm | 2.9 mm |
| Series | - | SI2 | SI2 |
| Width | - | 1.6 mm | 1.6 mm |
| Part # Aliases | - | SI2319DS-E3 | SI2319CDS-GE3 |
| Unit Weight | - | 0.000282 oz | 0.000282 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2319DDS-T1-GE3 | MOSFET -40V Vds 20V Vgs SOT-23 | |
| SI2319DS-T1-E3 | MOSFET 40V 3.0A 1.25W 82 mohms @ 10V | ||
| SI2319CDS-T1-GE3 | MOSFET -40V Vds 20V Vgs SOT-23 | ||
| SI2319DS-T1-GE3 | MOSFET 40V 3.0A 1.25W 82mohm @ 10V | ||
| SI2319 | 全新原装 | ||
| SI2319ADS-T1-GE3 | 全新原装 | ||
| SI2319CDS-T1-E3 | 全新原装 | ||
| SI2319CDS-T1-GE3/P7 | 全新原装 | ||
| SI2319CDS_T1_GE3 | 全新原装 | ||
| SI2319DS | 全新原装 | ||
| SI2319DS-1-E3 | 全新原装 | ||
| SI2319DS-T1 | MOSFET RECOMMENDED ALT 781-SI2319DS-T1-E3 | ||
| SI2319CDS-T1-GE3-CUT TAPE | 全新原装 | ||
| SI2319DS-T1-E3-CUT TAPE | 全新原装 | ||
Vishay |
SI2319CDS-T1-GE3 | MOSFET P-CH 40V 4.4A SOT-23 | |
| SI2319DS-T1-E3 | MOSFET P-CH 40V 2.3A SOT23-3 | ||
| SI2319DS-T1-GE3 | MOSFET P-CH 40V 2.3A SOT23-3 | ||
| SI2319DDS-T1-GE3 | MOSFET P-CHAN 40V |