 | | | |
| PartNumber | SI6968BEDQ-T1-E3-CUT TAPE | SI6968BEDQ-T1 | SI6968BEDQ-T1-E3. |
| Description | MOSFET RECOMMENDED ALT 781-SI6968BEDQ-E3 | Transistor Polarity:Dual N Channel, Continuous Drain Current Id:5.2A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.6V, Po |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6968BEDQ-T1-GE3 | MOSFET 20V Vds 12V Vgs TSSOP-8 | |
| SI6968BEDQ-T1-E3-CUT TAPE | 全新原装 | ||
| SI6968BEDQ-T1-GE3-CUT TAPE | 全新原装 | ||
| SI6968BEDQ-T1 | MOSFET RECOMMENDED ALT 781-SI6968BEDQ-E3 | ||
| SI6968BEDQ-T1-E3. | Transistor Polarity:Dual N Channel, Continuous Drain Current Id:5.2A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.6V, Po | ||
| SI6968BEDQ-T1-T1-E3 | 全新原装 | ||
| SI6968BEDQ-T1/6968E | 全新原装 | ||
| SI6968BEDQ-TI | 全新原装 | ||
| SI6968BEDQ-TI-E3 | 全新原装 | ||
| SI6968BEDQT1GE3 | Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI6968BEDY-T1-E3 | 全新原装 | ||
| SI6968BEQ-T1-E3 | 全新原装 | ||
| SI6968BEDQ | 全新原装 | ||
Vishay |
SI6968BEDQ-T1-E3 | MOSFET 2N-CH 20V 5.2A 8TSSOP | |
| SI6968BEDQ-T1-GE3 | MOSFET 2N-CH 20V 5.2A 8-TSSOP |