 |  | | |
| PartNumber | SI7119DN-T1-GE3 | SI7119DN-T1-GE3-CUT TAPE | SI7119DN-T1-GE3-D |
| Description | MOSFET -200V Vds 20V Vgs PowerPAK 1212-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 3.8 A | - | - |
| Rds On Drain Source Resistance | 1.05 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 16.2 nC | - | - |
| Minimum Operating Temperature | - 50 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 52 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SI7 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 4 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SI7119DN-GE3 | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7119DN-T1-GE3 | MOSFET -200V Vds 20V Vgs PowerPAK 1212-8 | |
| SI7119DN-T1-GE3-CUT TAPE | 全新原装 | ||
| SI7119DN-T1-GE3-D | 全新原装 | ||
Vishay |
SI7119DN-T1-GE3 | MOSFET P-CH 200V 3.8A 1212-8 |