SI7120

SI7120DN-T1-GE3 vs SI7120DN-T1-E3 vs SI7120ADN-T1-GE3

 
PartNumberSI7120DN-T1-GE3SI7120DN-T1-E3SI7120ADN-T1-GE3
DescriptionMOSFET RECOMMENDED ALT 78-SI7120ADN-T1-GE3MOSFET RECOMMENDED ALT 78-SI7120ADN-T1-GE3MOSFET N-CH 60V 6A 1212-8 PPAK
ManufacturerVishayVishayVISHAY
Product CategoryMOSFETMOSFETFETs - Single
RoHSYE-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK-1212-8-
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSI7SI7SI7120ADN
BrandVishay / SiliconixVishay / Siliconix-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSI7120DN-GE3SI7120DN-E3-
Package Case--PowerPAK-1212-8
Number of Channels--1 Channel
Configuration--Single
Transistor Type--1 N-Channel
Pd Power Dissipation--3.8 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--12 ns
Rise Time--12 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--9.5 A
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--2.5 V
Rds On Drain Source Resistance--21 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--50 ns
Typical Turn On Delay Time--14 ns
Qg Gate Charge--30 nC
Forward Transconductance Min--35 S
Channel Mode--Enhancement
制造商 型号 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7120DN-T1-GE3 MOSFET RECOMMENDED ALT 78-SI7120ADN-T1-GE3
SI7120DN-T1-E3 MOSFET RECOMMENDED ALT 78-SI7120ADN-T1-GE3
Vishay
Vishay
SI7120DN-T1-E3 IGBT Transistors MOSFET 60V 10A 0.019Ohm
SI7120DN-T1-GE3 IGBT Transistors MOSFET 60V 10A 3.8W 19mohm @ 10V
SI7120ADN-T1-GE3 MOSFET N-CH 60V 6A 1212-8 PPAK
SI7120ADN-T1-GE3-CUT TAPE 全新原装
SI7120 全新原装
SI7120ADN 全新原装
SI7120DN 全新原装
SI7120DN-T1-E3 GE3 全新原装
SI7120DN-T1-E3CT 全新原装
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