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| PartNumber | SI7405BDN-T1-E3 | SI7405BDN | SI7405BDN-T1-GE3 |
| Description | RF Bipolar Transistors MOSFET 12V 16A 33W 13mohm @ 4.5V | MOSFET P-CH 12V 16A 1212-8 | |
| Manufacturer | VISHAY | - | Vishay Siliconix |
| Product Category | FETs - Single | - | FETs - Single |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Part Aliases | SI7405BDN-E3 | - | SI7405BDN-GE3 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | PowerPAK-1212-8 | - | PowerPAKR 1212-8 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Pd Power Dissipation | 3.6 W | - | 3.6 W |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 45 ns | - | 45 ns |
| Rise Time | 60 ns | - | 60 ns |
| Vgs Gate Source Voltage | 8 V | - | 8 V |
| Id Continuous Drain Current | 13.5 A | - | 13.5 A |
| Vds Drain Source Breakdown Voltage | - 12 V | - | - 12 V |
| Rds On Drain Source Resistance | 13 mOhms | - | 13 mOhms |
| Transistor Polarity | P-Channel | - | P-Channel |
| Typical Turn Off Delay Time | 80 ns | - | 80 ns |
| Typical Turn On Delay Time | 22 ns | - | 22 ns |
| Channel Mode | Enhancement | - | Enhancement |
| Series | - | - | TrenchFETR |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PowerPAKR 1212-8 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 33W |
| Drain to Source Voltage Vdss | - | - | 12V |
| Input Capacitance Ciss Vds | - | - | 3500pF @ 6V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 16A (Tc) |
| Rds On Max Id Vgs | - | - | 13 mOhm @ 13.5A, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 115nC @ 8V |