SI7850

SI7850ADP-T1-GE3 vs SI7850 vs SI7850DP

 
PartNumberSI7850ADP-T1-GE3SI7850SI7850DP
DescriptionMOSFET 60V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance19.5 mOhms--
Vgs th Gate Source Threshold Voltage2.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation35.7 W--
ConfigurationSingle--
PackagingReel--
BrandVishay / Siliconix--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time7 ns--
制造商 型号 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7850ADP-T1-GE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SI7850DP-T1-E3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SI7850DP-T1-GE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SI7850DP-T1-E3-CUT TAPE 全新原装
SI7850DP-T1-GE3-CUT TAPE 全新原装
SI7850 全新原装
SI7850DP 全新原装
SI7850DP-T 全新原装
SI7850DP-T1 全新原装
SI7850DP-T1-E 全新原装
SI7850DP-T1-E SI7850DP- 全新原装
SI7850DP-T1-E3. Transistor Polarity:N Channel, Continuous Drain Current Id:10.3A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.022ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Diss
SI7850DP-V30328-T1-B 全新原装
SI7850DPT1E3 全新原装
SI7850DY 全新原装
SI7850MPR 全新原装
Vishay
Vishay
SI7850DP-T1-E3 MOSFET N-CH 60V 6.2A PPAK SO-8
SI7850DP-T1-GE3 MOSFET N-CH 60V 6.2A PPAK SO-8
SI7850ADP-T1-GE3 MOSFET N-CH 60V POWERPAK SO-8
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