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| PartNumber | SI7905DN-T1-E3 | SI7905DN-T1-GE3-CUT TAPE | SI7905DN-T1-GE3 |
| Description | RF Bipolar Transistors MOSFET 40V 6.0A 20.8W 60mohm @ 10V | MOSFET 2P-CH 40V 6A PPAK 1212-8 | |
| Manufacturer | Vishay Siliconix | - | - |
| Product Category | FETs - Arrays | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Tape & Reel (TR) | - | - |
| Part Aliases | SI7905DN-E3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | PowerPAKR 1212-8 Dual | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | PowerPAKR 1212-8 Dual | - | - |
| Configuration | Dual | - | - |
| FET Type | 2 P-Channel (Dual) | - | - |
| Power Max | 20.8W | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Drain to Source Voltage Vdss | 40V | - | - |
| Input Capacitance Ciss Vds | 880pF @ 20V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 6A | - | - |
| Rds On Max Id Vgs | 60 mOhm @ 5A, 10V | - | - |
| Vgs th Max Id | 3V @ 250μA | - | - |
| Gate Charge Qg Vgs | 30nC @ 10V | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 50 C | - | - |
| Fall Time | 11 ns 10 ns | - | - |
| Rise Time | 100 ns 13 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Vds Drain Source Breakdown Voltage | - 40 V | - | - |
| Rds On Drain Source Resistance | 60 mOhms | - | - |
| Transistor Polarity | P-Channel | - | - |
| Typical Turn Off Delay Time | 24 ns 26 ns | - | - |
| Typical Turn On Delay Time | 42 ns 6 ns | - | - |
| Channel Mode | Enhancement | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay |
SI7905DN-T1-E3 | RF Bipolar Transistors MOSFET 40V 6.0A 20.8W 60mohm @ 10V | |
| SI7905DN-T1-GE3 | MOSFET 2P-CH 40V 6A PPAK 1212-8 | ||
| SI7905DN-T1-GE3-CUT TAPE | 全新原装 |