 | |  | |
| PartNumber | SIA432DJ-T1-GE3 | SIA430DJT-T1-GE3 | SIA430DJT-T4-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SC-70 | MOSFET 20V Vds 20V Vgs Thin PowerPAK SC-70 | MOSFET 20V Vds 20V Vgs PowerPAK SC-70 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 | SC-70-6 |
| Tradename | TrenchFET, PowerPAK | TrenchFET | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Height | 0.75 mm | 0.75 mm | - |
| Length | 2.05 mm | 2.05 mm | - |
| Series | SIA | SIA | SIA |
| Width | 2.05 mm | 2.05 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SIA432DJ-GE3 | - | - |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 12 A |
| Rds On Drain Source Resistance | - | - | 13.5 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 1 V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Qg Gate Charge | - | - | 18 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 19.2 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Transistor Type | - | - | 1 N-Channel |
| Forward Transconductance Min | - | - | 16 S |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 10 ns |
| Typical Turn Off Delay Time | - | - | 15 ns |
| Typical Turn On Delay Time | - | - | 16 ns |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA437DJ-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | |
| SIA436DJ-T1-GE3 | MOSFET 8V Vds 5V Vgs PowerPAK SC-70 | ||
| SIA432DJ-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA430DJT-T1-GE3 | MOSFET 20V Vds 20V Vgs Thin PowerPAK SC-70 | ||
| SIA438EDJ-T1-GE3 | MOSFET 20V 6.0A 11.4W 46mohm @ 4.5V | ||
| SIA436DJ-T4-GE3 | MOSFET 8V Vds 5V Vgs PowerPAK SC-70 | ||
| SIA430DJT-T4-GE3 | MOSFET 20V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA439EDJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA445EDJ-T1-GE3 | ||
| SIA430DJ-T1-GE3-CUT TAPE | 全新原装 | ||
| SIA433EDJ-T1-GE3-CUT TAPE | 全新原装 | ||
| SIA430DJ | 全新原装 | ||
| SIA430DJ-T1-GE3-CUTTAPE | 全新原装 | ||
| SIA431DJ | 全新原装 | ||
| SIA431DJ- | 全新原装 | ||
| SIA431DJ-T1 | 全新原装 | ||
| SIA431DJ-TI-GE3 | 全新原装 | ||
| SIA431DJT1GE3 | Power Field-Effect Transistor, 9.6A I(D), 20V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIA432 | 全新原装 | ||
| SIA4320DJ-T1-GE3 | 全新原装 | ||
| SIA432DJ-TI-GE3 | 全新原装 | ||
| SIA433EDJ | 全新原装 | ||
| SIA433EDJT1GE3 | 全新原装 | ||
| SIA434DJ | 全新原装 | ||
| SIA436DJT1GE3 | 全新原装 | ||
Vishay |
SIA430DJ-T1-GE3 | MOSFET N-CH 20V 12A SC70-6 | |
| SIA430DJ-T4-GE3 | MOSFET N-CH 20V SC-70-6 | ||
| SIA430DJT-T1-GE3 | MOSFET N-CH 20V 12A SC70-6 | ||
| SIA431DJ-T1-GE3 | MOSFET P-CH 20V 12A PPAK SC70-6 | ||
| SIA432DJ-T1-GE3 | MOSFET N-CH 30V 12A SC70-6 | ||
| SIA433EDJ-T1-GE3 | MOSFET P-CH 20V 12A SC-70-6 | ||
| SIA436DJ-T1-GE3 | MOSFET N-CH 8V 12A SC70-6L | ||
| SIA437DJ-T1-GE3 | MOSFET P-CH 20V 29.7A SC70-6 | ||
| SIA439EDJ-T1-GE3 | MOSFET P-CH 20V 28A SC-70-6L | ||
| SIA430DJT-T4-GE3 | MOSFET N-CH 20V 12A SC-70-6 | ||
| SIA438EDJ-T1-GE3 | MOSFET N-CH 20V 6A PPAK SC70-6L |