PartNumber | SIHB24N65EF-GE3 | SIHB24N65E-GE3 | SIHB24N65E-E3 |
Description | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Packaging | Tube | Tube | Tube |
Series | SIH | E | E |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | TO-263-3 | TO-263-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 700 V | 700 V |
Id Continuous Drain Current | - | 24 A | 24 A |
Rds On Drain Source Resistance | - | 145 mOhms | 145 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4 V | 4 V |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 81 nC | 81 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 250 W | 250 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 69 ns | 69 ns |
Rise Time | - | 84 ns | 84 ns |
Typical Turn Off Delay Time | - | 70 ns | 70 ns |
Typical Turn On Delay Time | - | 24 ns | 24 ns |
Unit Weight | - | 0.050717 oz | 0.050717 oz |
Height | - | - | 4.83 mm |
Length | - | - | 10.67 mm |
Width | - | - | 9.65 mm |