| PartNumber | SIHG17N80E-GE3 | SIHG17N60D-GE3 | SIHG17N60D-E3 |
| Description | MOSFET 800V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 300 V | 600 V | 600 V |
| Id Continuous Drain Current | 15 A | 17 A | 17 A |
| Rds On Drain Source Resistance | 250 mOhms | 340 mOhms | 340 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 5 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 122 nC | 45 nC | 45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | 277.8 W | 277.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Bulk | Bulk |
| Series | E | D | D |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 26 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 50 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 71 ns | - | - |
| Typical Turn On Delay Time | 22 ns | - | - |
| Unit Weight | 0.211644 oz | 1.340411 oz | 1.340411 oz |
| Part # Aliases | - | SIHG17N60D-E3 | SIHG17N60D |