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| PartNumber | SIHH100N60E-T1-GE3 | SIHH11N60E-T1-GE3 | SIHH068N60E-T1-GE3 |
| Description | MOSFET 650V Vds; 30V Vgs PowerPAK 8x8 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-4 | PowerPAK-8x8-4 | PowerPAK-8x8-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 28 A | 11 A | 34 A |
| Rds On Drain Source Resistance | 100 mOhms | 295 mOhms | 68 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 4 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 53 nC | 31 nC | 80 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 174 W | 114 W | 202 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | E | E | E |
| Transistor Type | 1 N-Channel | - | 1 N-Channel E-Series Power MOSFET |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 12 S | - | 9.3 S |
| Fall Time | 41 ns | 21 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 54 ns | 21 ns | 148 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 41 ns | 39 ns | 60 ns |
| Typical Turn On Delay Time | 26 ns | 16 ns | 56 ns |
| Height | - | 1 mm | - |
| Length | - | 8 mm | - |
| Width | - | 8 mm | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHH100N60E-T1-GE3 | MOSFET 650V Vds; 30V Vgs PowerPAK 8x8 | |
| SIHH11N60E-T1-GE3 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH11N60EF-T1-GE3 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH180N60E-T1-GE3 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH068N60E-T1-GE3 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH125N60EF-T1GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode | ||
| SIHH120N60E-T1-GE3 | MOSFET 600V Vds; +/-30V Vgs PowerPAK 8x8 | ||
| SIHH14N60E-T1-GE3 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH14N65E-T1-GE3 | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH11N65E-T1-GE3 | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH11N65EF-T1-GE3 | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH14N60EF-T1-GE3 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH14N65EF-T1-GE3 | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 | ||
Vishay |
SIHH11N60E-T1-GE3 | MOSFET N-CH 600V 11A POWERPAK8X8 | |
| SIHH120N60E-T1-GE3 | MOSFET N-CHAN 600V PPAK 8X8 | ||
| SIHH11N60EF-T1-GE3 | MOSFET N-CH 600V 11A POWERPAK8X8 | ||
| SIHH14N60EF-T1-GE3 | MOSFET N-CH 600V 15A POWERPAK8X8 | ||
| SIHH14N60E-T1-GE3 | MOSFET N-CH 600V 16A POWERPAK8X8 | ||
| SIHH14N65EF-T1-GE3 | MOSFET N-CHAN 650V 15A POWERPAK | ||
| SIHH068N60E-T1-GE3 | E Series Power MOSFET | ||
| SIHH100N60E-T1-GE3 | E Series Power MOSFET PowerPAK 8x8, 100 m @ 10V | ||
| SIHH11N65E-T1-GE3 | Trans MOSFET N-CH 650V 12A 4-Pin PowerPAK EP T/R | ||
| SIHH11N65EF-T1-GE3 | MOSFET N-CHAN 600V 24A POWERPAK | ||
| SIHH14N65E-T1-GE3 | Trans MOSFET N-CH 650V 15A 4-Pin PowerPAK EP T/R | ||
| SIHH180N60E-T1-GE3 | E Series Power MOSFET PowerPAK 8x8, 180 m @ 10V | ||
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| SIHH14N65ET1GE3 | Power Field-Effect Transistor, 15A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |