SIR468DP-T1 stock, SIR468DP-T1, SIR468DP-T1-E3


PartNumber	SIR468DP-T1-E3	SIR468DP-T1-GE	SIR468DP-T1-GE3
Description			MOSFET N-CH 30V 40A PPAK SO-8
Manufacturer	VISHAY	-	Vishay Siliconix
Product Category	IC Chips	-	FETs - Single
Series	-	-	TrenchFETR
Packaging	-	-	Digi-ReelR Alternate Packaging
Part Aliases	-	-	SIR468DP-GE3
Unit Weight	-	-	0.017870 oz
Mounting Style	-	-	SMD/SMT
Package Case	-	-	PowerPAKR SO-8
Technology	-	-	Si
Operating Temperature	-	-	-55°C ~ 150°C (TJ)
Mounting Type	-	-	Surface Mount
Number of Channels	-	-	1 Channel
Supplier Device Package	-	-	PowerPAKR SO-8
Configuration	-	-	Single Quad Drain Triple Source
FET Type	-	-	MOSFET N-Channel, Metal Oxide
Power Max	-	-	50W
Transistor Type	-	-	1 N-Channel
Drain to Source Voltage Vdss	-	-	30V
Input Capacitance Ciss Vds	-	-	1720pF @ 15V
FET Feature	-	-	Standard
Current Continuous Drain Id 25°C	-	-	40A (Tc)
Rds On Max Id Vgs	-	-	5.7 mOhm @ 20A, 10V
Vgs th Max Id	-	-	3V @ 250μA
Gate Charge Qg Vgs	-	-	44nC @ 10V
Pd Power Dissipation	-	-	50 W
Maximum Operating Temperature	-	-	+ 150 C
Minimum Operating Temperature	-	-	- 55 C
Fall Time	-	-	9 ns
Rise Time	-	-	9 ns
Vgs Gate Source Voltage	-	-	20 V
Id Continuous Drain Current	-	-	40 A
Vds Drain Source Breakdown Voltage	-	-	30 V
Rds On Drain Source Resistance	-	-	5.7 mOhms
Transistor Polarity	-	-	N-Channel
Typical Turn Off Delay Time	-	-	27 ns
Typical Turn On Delay Time	-	-	11 ns
Qg Gate Charge	-	-	13.8 nC
Forward Transconductance Min	-	-	90 S
Channel Mode	-	-	Enhancement