 |  |  | |
| PartNumber | SIS452DN-T1-GE3 | SIS452DN-T1-E3 | SIS454DN-T1-GE3 |
| Description | MOSFET 12V Vds 20V Vgs PowerPAK 1212-8 | MOSFET N-CH 20V 35A 1212-8 PPAK | |
| Manufacturer | Vishay | - | VISHAY |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | Reel |
| Series | SIS | - | SISxxxDN |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SIS452DN-GE3 | - | - |
| Part Aliases | - | - | SIS454DN-GE3 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | PowerPAK-1212-8 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 52 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 35 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1 V to 2.2 V |
| Rds On Drain Source Resistance | - | - | 3 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Qg Gate Charge | - | - | 35 nC |
| Forward Transconductance Min | - | - | 70 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIS452DN-T1-GE3 | MOSFET 12V Vds 20V Vgs PowerPAK 1212-8 | |
| SIS456DN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SISH402DN-T1-GE3 | ||
| SIS452DN-T1-E3 | 全新原装 | ||
Vishay |
SIS452DN-T1-GE3 | MOSFET N-CH 12V 35A 1212-8 PPAK | |
| SIS454DN-T1-GE3 | MOSFET N-CH 20V 35A 1212-8 PPAK | ||
| SIS456DN-T1-GE3 | MOSFET N-CH 30V 35A PPAK 1212-8 |