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| PartNumber | SIS892ADN-T1-GE3 | SIS892DN-T1-GE3 | SIS892ADN |
| Description | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 100V 30A 43W 29 mohms @ 10V | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 28 A | 30 A | - |
| Rds On Drain Source Resistance | 27 mOhms | 29 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 19.5 nC | 14.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 52 W | 52 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | SIS | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 19 S | 22 S | - |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns | 11 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16 ns | 21 ns | - |
| Typical Turn On Delay Time | 10 ns | 8 ns | - |
| Part # Aliases | SIS892ADN-GE3 | SIS892DN-GE3 | - |