 |  | | |
| PartNumber | SISB46DN-T1-GE3 | SISB46DN | SISB46DNT1GE3 |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 34 A | - | - |
| Rds On Drain Source Resistance | 11.71 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | - 16 V, 20 V | - | - |
| Qg Gate Charge | 22 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 23 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 52 S | - | - |
| Fall Time | 27 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 56 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISB46DN-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8 | |
| SISB46DN | 全新原装 | ||
| SISB46DNT1GE3 | 全新原装 | ||
Vishay |
SISB46DN-T1-GE3 | MOSFET 2N-CH 40V POWERPAK 1212-8 |