SISHA1

SISHA14DN-T1-GE3 vs SISHA12ADN-T1-GE3 vs SISHA10DN-T1-GE3

 
PartNumberSISHA14DN-T1-GE3SISHA12ADN-T1-GE3SISHA10DN-T1-GE3
DescriptionMOSFET N-Channel 30 V (D-S) MOSFETMOSFET N-Channel 30 V (D-S) MOSFETMOSFET N-Channel 30 V (D-S) MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current20 A25 A30 A
Rds On Drain Source Resistance5.1 mOhms4.3 mOhms3.7 mOhms
Vgs th Gate Source Threshold Voltage1.1 V1.1 V1.1 V
Vgs Gate Source Voltage- 16 V, 20 V- 16 V, 20 V- 16 V, 20 V
Qg Gate Charge19.4 nC29.5 nC34 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation26.5 W28 W39 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenamePowerPAKPowerPAKPowerPAK
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min65 S51 S52 S
Fall Time8 ns10 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time8 ns10 ns10 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time18 ns25 ns27 ns
Typical Turn On Delay Time9 ns10 ns10 ns
制造商 型号 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SISHA14DN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SISHA12ADN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SISHA10DN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
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