 |  |  | |
| PartNumber | SISS26DN-T1-GE3 | SISS23DN-T1-GE3 | SISS22DN-T1-GE3 |
| Description | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8S-8 | PowerPAK-1212-8 | PowerPAK-1212-8S |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 20 V | 60 V |
| Id Continuous Drain Current | 60 A | 50 A | 90.6 A |
| Rds On Drain Source Resistance | 3.7 mOhms | 3.5 mOhms | 4 mOhms |
| Vgs th Gate Source Threshold Voltage | 6.7 V | 900 mV | 2 V |
| Vgs Gate Source Voltage | 20 V | 8 V | 20 V |
| Qg Gate Charge | 24.5 nC | 300 nC | 44 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 57 W | 57 W | 65.7 W |
| Configuration | Single | Single | Single |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIS | SIS | SIS |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 9 ns | 50 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | 50 ns | 6 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 140 ns | 20 ns |
| Typical Turn On Delay Time | 10 ns | 45 ns | 12 ns |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 1.04 mm | - |
| Length | - | 3.3 mm | - |
| Transistor Type | - | 1 P-Channel | 1 N-Channel TrenchFET Power MOSFET |
| Width | - | 3.3 mm | - |
| Forward Transconductance Min | - | 44 S | 50 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISS26DN-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S | |
| SISS28DN-T1-GE3 | MOSFET N-Ch 25V Vds 21.8nC Qg Typ | ||
| SISS27DN-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S | ||
| SISS23DN-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S | ||
| SISS27ADN-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S | ||
| SISS26LDN-T1-GE3 | MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S | ||
| SISS22DN-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S | ||
Vishay |
SISS27DN-T1-GE3 | IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III | |
| SISS27ADN-T1-GE3 | MOSFET P-CH 30V 50A POWERPAK1212 | ||
| SISS23DN-T1-GE3 | MOSFET P-CH 20V 50A PPAK 1212-8S | ||
| SISS26DN-T1-GE3 | MOSFET N-CHANNEL 60V 60A 1212-8S | ||
| SISS28DN-T1-GE3 | MOSFET N-CH 25V 60A POWERPAK1212 | ||
| SISS22DN-T1-GE3 | N-Channel 60 V (D-S) MOSFET PowerPAK 1212-8S 250M SG 2 mil , 4 m @ 10V 3.85 m @ 7.5V m @ 4.5V | ||
| SISS23DN | 全新原装 | ||
| SISS23DNT1GE3 | Power Field-Effect Transisto | ||
| SISS27DN | 全新原装 | ||
| SISS27DN-T1-G3 | 全新原装 |