PartNumber | SIZ728DT-T1-GE3 | SIZ728DT | SIZ728DTT1GE3 |
Description | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 3.7 | Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Manufacturer | Vishay | Vishay Siliconix | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Series | SIZ | TrenchFETR | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SIZ728DT-GE3 | - | - |
Part Aliases | - | SIZ728DT-GE3 | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | 6-PowerPair | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 2 Channel | - |
Supplier Device Package | - | 6-PowerPair | - |
Configuration | - | Dual | - |
FET Type | - | 2 N-Channel (Half Bridge) | - |
Power Max | - | 27W, 48W | - |
Transistor Type | - | 2 N-Channel | - |
Drain to Source Voltage Vdss | - | 25V | - |
Input Capacitance Ciss Vds | - | 890pF @ 12.5V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 16A, 35A | - |
Rds On Max Id Vgs | - | 7.7 mOhm @ 18A, 10V | - |
Vgs th Max Id | - | 2.2V @ 250μA | - |
Gate Charge Qg Vgs | - | 26nC @ 10V | - |
Pd Power Dissipation | - | 2.5 W 3 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 10 ns | - |
Rise Time | - | 15 ns 18 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 14.2 A | - |
Vds Drain Source Breakdown Voltage | - | 25 V | - |
Rds On Drain Source Resistance | - | 6.3 mOhms 2.9 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Forward Transconductance Min | - | 37 S 80 S | - |