![]() | ![]() | ||
| PartNumber | SIZ728DT-T1-GE3 | SIZ728DT | SIZ728DTT1GE3 |
| Description | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 3.7 | Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | SIZ | TrenchFETR | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SIZ728DT-GE3 | - | - |
| Part Aliases | - | SIZ728DT-GE3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | 6-PowerPair | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | 6-PowerPair | - |
| Configuration | - | Dual | - |
| FET Type | - | 2 N-Channel (Half Bridge) | - |
| Power Max | - | 27W, 48W | - |
| Transistor Type | - | 2 N-Channel | - |
| Drain to Source Voltage Vdss | - | 25V | - |
| Input Capacitance Ciss Vds | - | 890pF @ 12.5V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 16A, 35A | - |
| Rds On Max Id Vgs | - | 7.7 mOhm @ 18A, 10V | - |
| Vgs th Max Id | - | 2.2V @ 250μA | - |
| Gate Charge Qg Vgs | - | 26nC @ 10V | - |
| Pd Power Dissipation | - | 2.5 W 3 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 15 ns 18 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 14.2 A | - |
| Vds Drain Source Breakdown Voltage | - | 25 V | - |
| Rds On Drain Source Resistance | - | 6.3 mOhms 2.9 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Forward Transconductance Min | - | 37 S 80 S | - |