| PartNumber | SPB08P06P G | SPB08P06PGATMA1 | SPB08P06P |
| Description | MOSFET P-Ch -60V 8.8A D2PAK-2 | MOSFET SMALL SIGNAL+P-CH | MOSFET P-CH 60V 8.8A D2PAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 8.8 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | SPB08P06 | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 14 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 46 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 48 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | SP000102179 SPB08P06PGATMA1 SPB8P6PGXT | G SP000102179 SPB08P06P SPB8P6PGXT | - |
| Unit Weight | 0.067021 oz | 0.139332 oz | - |