PartNumber | SPD06N80C3ATMA1 | SPD06N60C3ATMA1 | SPD06N60C3BTMA1 |
Description | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | MOSFET N-CH 650V 6.2A TO-252 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 800 V | 600 V | - |
Id Continuous Drain Current | 6 A | 6.2 A | - |
Rds On Drain Source Resistance | 900 mOhms | 680 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 31 nC | 31 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 83 W | 74 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | CoolMOS C3 | CoolMOS C3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 8 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 15 ns | 12 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 72 ns | 52 ns | - |
Typical Turn On Delay Time | 25 ns | 7 ns | - |
Part # Aliases | SP001117772 SPD06N80C3 | SP001117770 SPD06N60C3 | - |
Unit Weight | 0.016579 oz | 0.139332 oz | - |
Forward Transconductance Min | - | 5.6 S | - |
制造商 | 型号 | 描述 | RFQ |
---|---|---|---|
Infineon Technologies |
SPD06N80C3ATMA1 | MOSFET LOW POWER_LEGACY | |
SPD06N60C3ATMA1 | MOSFET LOW POWER_LEGACY | ||
SPD07N60C3ATMA1 | MOSFET LOW POWER_LEGACY | ||
SPD07N60C3 | IGBT Transistors MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C3 | ||
SPD06N80C3ATMA1 | MOSFET N-CH 800V 6A 3TO252 | ||
SPD07N60C3ATMA1 | LOW POWER_LEGACY | ||
SPD06N60C3ATMA1 | MOSFET N-CH 600V 6.2A TO-252 | ||
SPD06N60C3BTMA1 | MOSFET N-CH 650V 6.2A TO-252 | ||
SPD06N80C3BTMA1 | MOSFET N-CH 800V 6A DPAK | ||
SPD07N20 | MOSFET N-CH 200V 7A TO-252 | ||
SPD07N20GBTMA1 | MOSFET N-CH 200V 7A TO252 | ||
SPD07N60C3BTMA1 | MOSFET N-CH 650V 7.3A DPAK | ||
SPD07N60C3T | MOSFET N-CH 650V 7.3A DPAK | ||
SPD07N60S5 | MOSFET N-CH 600V 7.3A DPAK | ||
SPD07N60S5T | MOSFET N-CH 600V 7.3A DPAK | ||
Infineon Technologies |
SPD06N80C3BTMA1 | MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3 | |
SPD07N20GBTMA1 | MOSFET N-Ch 200V 7A DPAK-2 | ||
SPD07N60S5 | MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS S5 | ||
SPD07N60C3 | MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C3 | ||
SPD07N20 | MOSFET N-Ch 200V 7A DPAK-2 | ||
SPD07N60C3BTMA1 | MOSFET LOW POWER_LEGACY | ||
SPD06N80C3 | IGBT Transistors MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3 | ||
SPD06N80C3ATMA1-CUT TAPE | 全新原装 | ||
SPD07N60C3ATMA1-CUT TAPE | 全新原装 | ||
SPD07N60S5 7N60S5A | 全新原装 | ||
SPD06N80C3(SP001117772) | 全新原装 | ||
SPD06N80C3(SP001117772)- | 全新原装 | ||
SPD06N80C3,06N80C3 | 全新原装 | ||
SPD06N80C3S | 全新原装 | ||
SPD06N80C3XT | MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3 | ||
SPD0730-220M | 全新原装 | ||
SPD0730-R33M | 全新原装 | ||
SPD0735-0R10M | 全新原装 | ||
SPD0735-1R0M-PF | 全新原装 | ||
SPD0735-R82M | 全新原装 | ||
SPD07N20 G | MOSFET N-Ch 200V 7A DPAK-2 | ||
SPD07N20G | 全新原装 | ||
SPD07N60 | 全新原装 | ||
SPD07N60C | 全新原装 | ||
SPD07N60C3,07N60C3, | 全新原装 | ||
SPD07N60C3/S5 | 全新原装 | ||
SPD07N60C3/SL7N60CD | 全新原装 | ||
SPD07N60S5,07N60S5 | 全新原装 | ||
SPD07N60S5,07N60S5, | 全新原装 | ||
SPD07N60S5A | 全新原装 | ||
SPD0735-0R68M-PF | 全新原装 | ||
SPD0735-2R2M-PF | 全新原装 | ||
SPD0735-3R3M | 全新原装 | ||
SPD07N60C2 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
SPD07N60S5BTMA1 | Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R - Bulk (Alt: SPD07N60S5BTMA1) |