SPD30N03S2L-1

SPD30N03S2L-10 vs SPD30N03S2L-10 G vs SPD30N03S2L-10G

 
PartNumberSPD30N03S2L-10SPD30N03S2L-10 GSPD30N03S2L-10G
DescriptionMOSFET N-Ch 30V 30A DPAK-2RF Bipolar Transistors MOSFET N-Ch 30V 30A DPAK-2
ManufacturerInfineon10INFINE0N-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance10.4 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation100 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min47.5 S / 23.8 S--
Fall Time17 ns17 ns-
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time13 ns13 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns27 ns-
Typical Turn On Delay Time6.1 ns6.1 ns-
Unit Weight0.139332 oz0.139332 oz-
Series-SPD30N03-
Part Aliases-SP000443918 SPD30N03S2L10GBTMA1 SPD30N03S2L10GXT-
Tradename-OptiMOS-
Package Case-TO-252-3-
Pd Power Dissipation-100 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-30 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-10 mOhms-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
SPD30N03S2L-10 MOSFET N-Ch 30V 30A DPAK-2
SPD30N03S2L-10 G RF Bipolar Transistors MOSFET N-Ch 30V 30A DPAK-2
SPD30N03S2L-10G 全新原装
Infineon Technologies
Infineon Technologies
SPD30N03S2L-10 MOSFET N-CH 30V 30A DPAK
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