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| PartNumber | SPI11N60C3HKSA1 | SPI11N65C3HKSA1 | SPI11N60S5 |
| Description | MOSFET Order Manufacturer Part Number SPI11N60C3 | MOSFET Order Manufacturer Part Number SPI11N65C3 | IGBT Transistors MOSFET N-Ch 600V 11A I2PAK-3 CoolMOS S5 |
| Manufacturer | Infineon | Infineon | INF |
| Product Category | MOSFET | MOSFET | IC Chips |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP000013522 SPI11N60C3 SPI11N60C3XK | SP000014526 SPI11N65C3 SPI11N65C3XK | - |
| Series | - | - | CoolMOS S5 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | SPI11N60S5HKSA1 |
| Unit Weight | - | - | 0.084199 oz |
| Package Case | - | - | I2PAK-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 125 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 20 ns |
| Rise Time | - | - | 35 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 11 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 380 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 150 ns |
| Typical Turn On Delay Time | - | - | 130 ns |
| Channel Mode | - | - | Enhancement |