SPN02N

SPN02N60C3 E6433 vs SPN02N60C3 vs SPN02N60S5

 
PartNumberSPN02N60C3 E6433SPN02N60C3SPN02N60S5
DescriptionMOSFET N-Ch 600V 400mA SOT-223-3MOSFET N-CH 650V 0.4A SOT-223MOSFET N-CH 600V 0.4A SOT-223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current400 mA--
Rds On Drain Source Resistance2.5 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesSPN02N60C3E6433XT--
Unit Weight0.003951 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
SPN02N60C3 E6433 MOSFET N-Ch 600V 400mA SOT-223-3
Infineon Technologies
Infineon Technologies
SPN02N60C3 MOSFET N-CH 650V 0.4A SOT-223
SPN02N60C3 E6433 MOSFET N-CH 650V 0.4A SOT-223
SPN02N60S5 MOSFET N-CH 600V 0.4A SOT-223
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