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| PartNumber | SQ4940AEY-T1_GE3 | SQ4940AEY-T1-GE3 | SQ4940AEY-T1-E3 |
| Description | MOSFET 40V 8A 4W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ4940AEY-T1_GE3 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 20 mOhms, 20 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 43 nC, 43 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 4 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SQ | SQ | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 33 S, 33 S | - | - |
| Fall Time | 9 ns, 9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns, 13 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns, 20 ns | - | - |
| Typical Turn On Delay Time | 8 ns, 8 ns | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ4940AEY-T1_GE3 | MOSFET 40V 8A 4W AEC-Q101 Qualified | |
| SQ4940AEY-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ4940AEY-T1_GE3 | ||
| SQ4940AEY-T1-GE3 | IGBT Transistors MOSFET 40V 8A 4W | ||
| SQ4940AEY-T1-E3 | 全新原装 | ||
Vishay |
SQ4940AEY-T1_GE3 | MOSFET 2N-CH 40V 8A 8SOIC |