SQD40N10

SQD40N10-25_GE3 vs SQD40N10-25-T4_GE3 vs SQD40N10-25-GE3

 
PartNumberSQD40N10-25_GE3SQD40N10-25-T4_GE3SQD40N10-25-GE3
DescriptionMOSFET RECOMMENDED ALT 78-SQD70140EL_GE3MOSFET RECOMMENDED ALT 78-SQD70140EL_GE3MOSFET 100V 40A 136W 25mohm @ 10V
ManufacturerVishayVishayVISHAY
Product CategoryMOSFETMOSFETFETs - Single
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V40 V-
Id Continuous Drain Current40 A50 A-
Rds On Drain Source Resistance19 mOhms5.6 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge70 nC55 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W71 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
PackagingReel--
Height2.38 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min73 S--
Fall Time6 ns--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity20001-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.050717 oz--
制造商 型号 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD40N10-25_GE3 MOSFET RECOMMENDED ALT 78-SQD70140EL_GE3
SQD40N10-25-T4_GE3 MOSFET RECOMMENDED ALT 78-SQD70140EL_GE3
SQD40N10-25-GE3 MOSFET 100V 40A 136W 25mohm @ 10V
Vishay
Vishay
SQD40N10-25_GE3 MOSFET N-CH 100V 40A TO252
SQD40N10 全新原装
SQD40N10-25 全新原装
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