 |  |  | |
| PartNumber | SQJ848EP-T1-GE3 | SQJ848EP-T1_GE3 | SQJ848EP |
| Description | MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3 | MOSFET N-CH 40V 47A POWERPAKSO-8 | |
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SQ | SQ Series | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SQJ848EP-GE3 | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Part Aliases | - | SQJ848EP-GE3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SO-8 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 68 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 30 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Rds On Drain Source Resistance | - | 9 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Qg Gate Charge | - | 15 nC | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ848EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3 | |
| SQJ848EP-T1-GE3 | IGBT Transistors MOSFET 40V 30A 68W N-Ch Automotive | ||
Vishay |
SQJ848EP-T1_GE3 | MOSFET N-CH 40V 47A POWERPAKSO-8 | |
| SQJ848EP | 全新原装 | ||
| SQJ848EPT1-GE3 | 全新原装 |