SQM6

SQM60N06-15_GE3 vs SQM60030E_GE3 vs SQM60N20-35-GE3

 
PartNumberSQM60N06-15_GE3SQM60030E_GE3SQM60N20-35-GE3
DescriptionMOSFET 60V 60A 100W AEC-Q101 QualifiedMOSFET N Ch 80Vds 20Vgs AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQM60N20-35_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V80 V-
Id Continuous Drain Current56 A120 A-
Rds On Drain Source Resistance12 mOhms2.6 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge50 nC165 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation107 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelTube-
SeriesSQSQSQ
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min61 S105 S-
Fall Time7 ns9 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time12 ns13 ns-
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time21 ns39 ns-
Typical Turn On Delay Time11 ns19 ns-
Unit Weight0.050717 oz0.077603 oz0.077603 oz
Height--4.83 mm
Length--10.67 mm
Width--9.65 mm
制造商 型号 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQM60N06-15_GE3 MOSFET 60V 60A 100W AEC-Q101 Qualified
SQM60N20-35_GE3 MOSFET N-Channel 200V AEC-Q101 Qualified
SQM60030E_GE3 MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified
SQM60N20-35-GE3 MOSFET RECOMMENDED ALT 78-SQM60N20-35_GE3
SQM60N06-15_GE3-CUT TAPE 全新原装
SQM60030E 全新原装
SQM60N06-15 全新原装
SQM60N06-15-GE3 Trans MOSFET N-CH 60V 56A Automotive 3-Pin(2+Tab) D2PAK T/R
SQM60N20-35 全新原装
SQM60N20-35-GE3 N-CHANNEL 200-V (D-S) 175C MOS
Vishay
Vishay
SQM60030E_GE3 MOSFET N-CH 80V 120A D2PAK
SQM60N06-15_GE3 MOSFET N-CH 60V 56A TO263
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