SSM3J118

SSM3J118TU,LF vs SSM3J118TU(TE85L) vs SSM3J118TU

 
PartNumberSSM3J118TU,LFSSM3J118TU(TE85L)SSM3J118TU
DescriptionMOSFET LowON Res MOSFET ID=-1.4A VDSS=-30VIGBT Transistors MOSFET Vds=-30V Id=-1.4A 3Pin
ManufacturerToshibaToshibaToshiba
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseUFM-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current1.4 A--
Rds On Drain Source Resistance240 mOhms--
Vgs th Gate Source Threshold Voltage2.6 V--
Vgs Gate Source Voltage20 V--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation800 mW--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesSSM3J118TU--
BrandToshiba--
Forward Transconductance Min0.8 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.000233 oz--
Package Case-UFM-3-
Transistor Type-1 P-Channel-
Pd Power Dissipation-800 mW-
Minimum Operating Temperature-- 55 C-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 1.4 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-360 mOhms-
Forward Transconductance Min-1.5 S / 0.8 S-
制造商 型号 描述 RFQ
Toshiba
Toshiba
SSM3J118TU,LF MOSFET LowON Res MOSFET ID=-1.4A VDSS=-30V
SSM3J118TU(TE85L) IGBT Transistors MOSFET Vds=-30V Id=-1.4A 3Pin
SSM3J118TU 全新原装
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