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| PartNumber | SSM6L14FE(TE85L,F) | SSM6L14FE | SSM6L14FE (TE85L,F) |
| Description | MOSFET LowON Res MOSFET ID=0.8A VDSS=20V | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 80 mA, 720 mA | - | - |
| Rds On Drain Source Resistance | 240 mOhms, 300 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 350 mV, 1 V | - | - |
| Vgs Gate Source Voltage | 10 V, 8 V | - | - |
| Qg Gate Charge | 2 nC, 1.76 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Series | SSM6L14FE | - | - |
| Width | 1.2 mm | - | - |
| Brand | Toshiba | - | - |
| Forward Transconductance Min | 1.05 S, 850 mS | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns, 38 ns | - | - |
| Typical Turn On Delay Time | 18 ns, 11 ns | - | - |
| Unit Weight | 0.000106 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
SSM6L14FE(TE85L,F) | MOSFET LowON Res MOSFET ID=0.8A VDSS=20V | |
| SSM6L14FE | 全新原装 | ||
| SSM6L14FE (TE85L,F) | 全新原装 |