STB11NK

STB11NK40ZT4 vs STB11NK40Z vs STB11NK50ZT4

 
PartNumberSTB11NK40ZT4STB11NK40ZSTB11NK50ZT4
DescriptionMOSFET N-Ch 400 Volt 9 Amp Zener SuperMESHMOSFET N-CH 500V 10A D2PAK
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage400 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance550 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation110 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height4.6 mm--
Length10.4 mm--
SeriesSTB11NK40ZT4-STB11NK50Z
Transistor Type1 N-Channel-1 N-Channel
TypeMOSFET--
Width9.35 mm--
BrandSTMicroelectronics--
Forward Transconductance Min5.8 S--
Fall Time18 ns-15 ns
Product TypeMOSFET--
Rise Time20 ns-18 ns
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns-41 ns
Typical Turn On Delay Time20 ns-14.5 ns
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--125 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--10 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--480 mOhms
Qg Gate Charge--49 nC
Forward Transconductance Min--77 S
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STB11NK40ZT4 MOSFET N-Ch 400 Volt 9 Amp Zener SuperMESH
STB11NK40ZT4 MOSFET N-CH 400V 9A D2PAK
STB11NK50ZT4 MOSFET N-CH 500V 10A D2PAK
STB11NK50ZT4-CUT TAPE 全新原装
STB11NK40Z 全新原装
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