 | | | |
| PartNumber | STB27NM60ND | STB28N60DM2 | STB270N4F3 |
| Description | MOSFET N-Ch Power Mosfet 600V STripFET D2PAK | MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package | MOSFET N-Channel 40V Pwr Mosfet |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 40 V |
| Id Continuous Drain Current | 21 A | 22 A | 160 A |
| Rds On Drain Source Resistance | 130 mOhms | 130 mOhms | 2 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | 20 V |
| Qg Gate Charge | 80 nC | 39 nC | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 160 W | 190 W | 330 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Series | STB27NM60ND | STB28N60DM2 | STB270N4F3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Forward Transconductance Min | 17 S | - | - |
| Fall Time | 40 ns | - | 45 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 30 ns | - | 180 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | - | 110 ns |
| Typical Turn On Delay Time | 60 ns | - | 22 ns |
| Unit Weight | 0.139332 oz | 0.079014 oz | 0.139332 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Tradename | - | MDmesh | STripFET |
| Height | - | - | 4.6 mm |
| Length | - | - | 10.4 mm |
| Width | - | - | 9.35 mm |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STB28NM60ND | MOSFET Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET | |
| STB28NM50N | MOSFET N-Ch 500V 0.135 21A MDmesh II | ||
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| STB27NM60ND | MOSFET N-Ch Power Mosfet 600V STripFET D2PAK | ||
| STB28N60M2 | MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package | ||
| STB28N60DM2 | MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package | ||
| STB270N4F3 | MOSFET N-Channel 40V Pwr Mosfet | ||
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| STB2N62K3 | IGBT Transistors MOSFET N-Ch 620V 2.2A MOS 3Ohm SuperMESH 3 | ||
| STB27NM60ND | RF Bipolar Transistors MOSFET N-Ch Power Mosfet 600V STripFET D2PAK | ||
| STB270N4F3 | MOSFET N-CH 40V 160A D2PAK | ||
| STB28N60DM2 | MOSFET N-CH 600V 21A | ||
| STB28N60M2 | MOSFET N-CH 600V 22A D2PAK | ||
| STB28NM50N | MOSFET N-CH 500V 21A D2PAK | ||
| STB28NM60ND | MOSFET N-CH 600V 23A D2PAK | ||
| STB270N4F3-CUT TAPE | 全新原装 | ||
| STB28N60DM2-CUT TAPE | 全新原装 | ||
| STB28N65M2-CUT TAPE | 全新原装 | ||
| STB28NM50N-CUT TAPE | 全新原装 | ||
| STB270N04 | 全新原装 | ||
| STB271KB | 全新原装 | ||
| STB271KBTBM | 全新原装 | ||
| STB27NM60NDZ | 全新原装 | ||
| STB2N60T4 | 全新原装 |