 | | |
| PartNumber | STB28NM60ND | STB28NM50N |
| Description | MOSFET Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET | MOSFET N-Ch 500V 0.135 21A MDmesh II |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 500 V |
| Id Continuous Drain Current | 23 A | 21 A |
| Rds On Drain Source Resistance | 150 mOhms | 158 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Qg Gate Charge | 62.5 nC | 50 nC |
| Pd Power Dissipation | 190 W | 150 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Series | STB28NM60ND | STB28NM50N |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 27 ns | 52 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 21.5 ns | 19 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 92 ns | 62 ns |
| Typical Turn On Delay Time | 23.5 ns | 13.6 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Maximum Operating Temperature | - | + 150 C |
| Tradename | - | MDmesh |
| Type | - | N-Channel MDmesh II Power MOSFET |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STB28NM60ND | MOSFET Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET | |
| STB28NM50N | MOSFET N-Ch 500V 0.135 21A MDmesh II | ||
| STB28NM50N | MOSFET N-CH 500V 21A D2PAK | ||
| STB28NM60ND | MOSFET N-CH 600V 23A D2PAK | ||
| STB28NM50N-CUT TAPE | 全新原装 |