| PartNumber | STB36N60M6 | STB36NM60N | STB36NF06LT4 |
| Description | MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package | MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS | MOSFET 60V 0.032Ohm 30A N-Channel |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | D2PAK-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 60 V |
| Id Continuous Drain Current | 30 A | 29 A | 30 A |
| Rds On Drain Source Resistance | 85 mOhms | 105 mOhms | 40 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.25 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | 18 V |
| Qg Gate Charge | 44.3 nC | 83.6 nC | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 175 C |
| Pd Power Dissipation | 208 W | 210 W | 70 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | MDmesh | MDmesh | - |
| Series | STB36N60M6 | STB36NM60N | STB36NF06LT4 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 7.3 ns | - | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5.3 ns | - | 80 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50.2 ns | - | 19 ns |
| Typical Turn On Delay Time | 15.2 ns | - | 10 ns |
| Qualification | - | AEC-Q101 | AEC-Q101 |
| Packaging | - | Reel | Reel |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |
| Height | - | - | 4.6 mm |
| Length | - | - | 10.4 mm |
| Width | - | - | 9.35 mm |